Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

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DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

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Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

Name: Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mWSr
Brand: Double Light
Price: 1 USD

Wholesale Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr from china suppliers

Brand Name : Double Light

Model Number : DL-HP20SIRA-1SIR120

Certification : ISO9001:2008,ROHS

Place of Origin : China (mainland)

MOQ : 10,000pcs

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000pcs per Day

Delivery Time : 5-7 working days after received your payment

Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms

Product Name : High Power Infrared LED

Diameter : LED Infrared

Emitted Color : Infrared LED

Peak Emission Wavelength : 850nm

Chip Material : GaAlAs

Lens Type : Water Clear

Forward Voltage @20ma : 1.4-1.8V

Viewing Angle : 120 Deg

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Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

High Power Infrared Emitting Diode

Features:

Free air transmission system. Optoelectronic switch. Floppy disk drive. Infrared applied system. Smoke detector.

Applications:

The DL-HP20SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Descriptions: High reliability. High radiant intensity. Low forward voltage. Peak wavelength λp=850nm. The product itself will remain within RoHS compliant version.

1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED

CCTV
Wireless communication
Indoor Lighting
Outdoor Lighting

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	2000	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.50	A
Forward Current	IF	1000	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-10℃ to +70℃
Storage Temperature Range	Tstg	-20℃ to +80℃
Soldering Temperature	Tsld	260℃ for 5 Seconds

Electrical Optical Characteristics at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity	Ie	360	450	---	mW/Sr	IF=1000mA
Viewing Angle *	2θ1/2	---	120	---	Deg	(Note 1)
Peak Emission Wavelength	λp	---	850	---	nm	IF=1000mA
Spectral Bandwidth	△λ	---	40	---	nm	IF=1000mA
Forward Voltage	VF	1.30	1.70	2.00	V	IF=1000mA
Reverse Current	IR	---	---	50	µA	V_R=5V

Notes:

1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

2. θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

Infrared Emitting Diode Package Dimension:

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

Product Tags:

ir emitting diode

940nm infrared led

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr Images

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